MRF9030LR1

MRF9030LR1

  • Description:RF MOSFET LDMOS 26V NI360
  • Series:-

SKU:d1e021dc80ff Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 26V NI360
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:945MHz
  • Gain:19dB
  • Voltage - Test:26 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:250 mA
  • Power - Output:30W
  • Voltage - Rated:68 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-360
  • Supplier Device Package:NI-360
  • Configuration:-

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MRF9030LR1

Overview

The MRF9030LR1 is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband commercial and industrial applications up to 1.0 GHz. It operates at a maximum drain-source breakdown voltage of 68 V and handles a maximum power dissipation of 92 W. Typical two-tone performance at 945 MHz and 26 volts yields 30 Watts PEP output power, 19 dB power gain, 41.5% efficiency, and -32.5 dBc IMD. The device is characterized with series equivalent large-signal impedance parameters.

Feature Summary

  • Integrated electrostatic discharge (ESD) protection
  • Designed for maximum gain and insertion phase flatness
  • Capable of handling 10:1 VSWR under specified operating conditions
  • Excellent thermal stability

Applications

  • Large-signal common-source amplifier applications in 26 volt base station equipment
  • Broadband commercial applications with frequencies up to 1.0 GHz
  • Industrial applications requiring high gain and broadband performance

Procurement Notes

Verify the specific suffix against official documentation to confirm package type and reel quantity. The R1 suffix typically indicates tape and reel packaging with 500 units per 32 mm reel. Confirm RoHS compliance status and lead time requirements directly with authorized distributors or NXP sales representatives prior to ordering.

Selection Notes

Select this component for designs requiring high gain and broadband performance in 26-volt base station environments. Ensure the application frequency remains within the 1.0 GHz limit. Verify that the thermal management solution supports the 92 W maximum power dissipation rating. Check compatibility with the FO-67VAR package for PCB layout constraints.

Part Context

This part belongs to the RF Sub-Micron MOSFET line from NXP Semiconductors, formerly Motorola Semiconductor. The MRF9030 series includes variants such as MRF9030L and MRF9030LSR1, all sharing similar electrical characteristics but differing in packaging and shipping configurations. These devices are lateral N-channel enhancement-mode MOSFETs optimized for RF power amplification.

Replacement Considerations

Official replacement part numbers include MRF9030LSR1. Verify pinout and mechanical dimensions before substitution.

MRF9030LR1MRF9030LR1

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