MRF9030NR1

Overview

The MRF9030NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 65 Vdc with a maximum total device dissipation of 139 W at 25°C case temperature. Typical performance at 945 MHz and 26 Volts includes 30 Watts PEP output power, 20 dB power gain, 41% efficiency, and -31 dBc intermodulation distortion. The device features integrated ESD protection rated HBM Class 1 and MML M2.

Feature Summary

• Integrated electrostatic discharge (ESD) protection
• Excellent thermal stability
• Characterized with series equivalent large-signal impedance parameters

Applications

• Broadband commercial applications
• Industrial applications
• Large-signal common-source amplifier applications in 26 volt base station equipment

Procurement Notes

Verify the component status as Not Recommended for New Design before procurement. Confirm that the R1 suffix corresponds to the specified tape and reel quantity of 500 units per 24 mm, 13 inch reel. Ensure compatibility with the TO-270-2 package dimensions and lead-free termination requirements.

Selection Notes

Select this component for designs requiring high gain and broadband performance up to 1000 MHz. Validate suitability for 26 volt base station environments. Consider the dual-lead boltdown plastic package capability for both through-hole and surface mount implementations when designing the PCB layout.

Part Context

This part belongs to the RF Power Field Effect Transistor line manufactured by Freescale Semiconductor, now part of NXP USA Inc. It is categorized as an N-Channel Enhancement-Mode Lateral MOSFET intended for RF power amplification tasks within specific frequency bands.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.