MRF9060LR5

Overview

The MRF9060LR5 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 65 Vdc with a typical output power of 60 Watts PEP at 945 MHz. The device provides a power gain of 17 dB and a drain efficiency of 40% under two-tone conditions. It features integrated ESD protection and is characterized by excellent thermal stability and insertion phase flatness.

Feature Summary

• Integrated electrostatic discharge (ESD) protection
• Designed for maximum gain and insertion phase flatness
• Excellent thermal stability
• Characterized with series equivalent large-signal impedance parameters

Applications

• Broadband commercial base station equipment
• Industrial amplifier applications
• Large-signal common-source amplifier circuits

Procurement Notes

Verify the specific suffix 'R5' against official documentation, as datasheets reference 'R1' for tape and reel packaging. Confirm RoHS compliance status and check current product lifecycle status, as this component may be discontinued or subject to change without notice.

Selection Notes

Select based on required operating frequency within the 930-960 MHz range and necessary output power levels. Ensure thermal management solutions can handle the specified junction-to-case thermal resistance. Verify compatibility with 26 Vdc supply requirements and gate drive characteristics.

Part Context

This component belongs to the MRF9060 series of RF power field effect transistors manufactured by NXP USA Inc. (formerly Freescale Semiconductor). These devices are lateral N-channel MOSFETs specifically engineered for high-power, broadband radio frequency amplification in demanding communication environments.

Replacement Considerations

MRF9060LR1 is a documented variant within the same series offering identical electrical performance but potentially differing in lead plating thickness or packaging configuration.