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Product Detailed Parameters
- Description：RF MOSFET LDMOS 26V TO270-2
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：LDMOS
- Frequency：945MHz
- Gain：18dB
- Voltage - Test：26 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：450 mA
- Power - Output：60W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：TO-270AA
- Supplier Device Package：TO-270-2
- Configuration：-
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Overview
The MRF9060NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. It operates at a drain voltage of 28 Volts and delivers 14 Watts average output power in single-carrier N-CDMA configurations at 880 MHz. The device features high gain and broadband performance, making it suitable for large-signal common-source amplifier applications in base station equipment.
Feature Summary
- Designed for broadband commercial and industrial applications up to 1000 MHz
- High gain and broadband performance for large-signal common-source amplifiers
- Integrated ESD protection capabilities
- Capable of handling 10:1 VSWR under specified operating conditions
Applications
- Single-carrier N-CDMA base station amplifiers
- GSM EDGE application amplifiers
- Broadband commercial and industrial RF amplification
Procurement Notes
Verify the specific suffix designation against official documentation, as package variations exist within this product family. Confirm lead-free termination status and moisture sensitivity levels prior to assembly. Ensure compatibility with 28-volt supply requirements and thermal management solutions suitable for TO-270 or TO-272 packages.
Selection Notes
Select this component for applications requiring high gain and broadband operation up to 1 GHz. It is optimized for 28-volt base station equipment. Consider the specific package variant (TO-270 or TO-272) based on board layout and mounting constraints. Verify that the required output power aligns with the 14-watt average specification for N-CDMA signals.
Part Context
This part belongs to the Freescale Semiconductor RF Power Field Effect Transistor series. These devices are lateral MOSFETs engineered for robust performance in cellular infrastructure. The product line supports various modulation schemes including CDMA and GSM, providing reliable amplification for wireless communication base stations.
Replacement Considerations
Consult official substitution guides for equivalent parts. Verify pinout compatibility and electrical parameter alignment before replacing existing components in established designs.
