MRF9210R5

Overview

The MRF9210R5 is an RF MOSFET utilizing LDMOS technology, manufactured by NXP USA Inc. It operates with a test voltage of 26 V and a test current of 1.9 A. The device functions within a frequency range centered at 880 MHz, delivering a power output of 40 W with a gain of 16.5 dB. It features a maximum rated voltage of 65 V and is housed in the NI-860C3 package.

Feature Summary

• LDMOS construction for high-power RF applications
• High gain performance at 880 MHz
• Robust 65 V rated voltage capability

Applications

• Base station amplifiers
• Broadband RF power amplification
• Wireless communication infrastructure

Procurement Notes

Verify component authenticity through authorized NXP channels. Confirm package integrity and RoHS compliance status prior to integration. Ensure handling procedures align with ESD protection standards for sensitive semiconductor devices.

Selection Notes

Select this component for applications requiring high efficiency at 880 MHz. Evaluate thermal management requirements due to 40 W output. Compare against alternative packages if space constraints differ from NI-860C3 dimensions.

Part Context

Part of the MRF series of RF power transistors designed for cellular infrastructure. Utilizes advanced LDMOS processes to balance linearity and power density. Supports standard base station architectures requiring reliable high-frequency operation.

Replacement Considerations

Direct substitutes include MRF9210 variants with compatible pinouts. Verify electrical parameters match original specifications before substitution.