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Product Detailed Parameters
- Description：RF MOSFET N-CHANNEL PLD-1
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Frequency：-
- Gain：10.5dB
- Voltage - Test：-
- Current Rating (Amps)：1.5A
- Noise Figure：-
- Current - Test：-
- Power - Output：38dB
- Voltage - Rated：17 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：PLD-1
- Supplier Device Package：PLD-1
- Configuration：N-Channel
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Overview
The MRF9582NT1 is a silicon lateral N-channel enhancement-mode MOSFET designed for high-frequency power applications. It operates at 849 MHz with a power output of 38 dBm and requires a 12.5 V supply voltage. The device features a PLD-1 package, providing robust performance in medium voltage environments. Key electrical characteristics include a gain of approximately 10.5 dB and an on-resistance of 0.8 ohms, supporting currents up to 1.5 A with a breakdown voltage of 17 V.
Feature Summary
- Silicon lateral FET construction optimized for RF power amplification
- N-channel enhancement-mode operation for reliable switching
- Designed for moderate power levels in cellular radio systems
Applications
- Portable analog cellular radios
- Digital cellular radios
- PC RF modems
Procurement Notes
Verify the component authenticity by checking the manufacturer marking against official Freescale Semiconductor documentation. Ensure the PLD-1 package matches the specified pinout and thermal requirements. Confirm RoHS compliance status if environmental regulations apply to your specific deployment scenario.
Selection Notes
Select this component for applications requiring moderate power output at 849 MHz. Consider the 12.5 V operating voltage and thermal management needs associated with the PLD-1 package. Evaluate compatibility with existing amplifier biasing circuits and impedance matching networks for optimal system integration.
Part Context
This part belongs to the Freescale Semiconductor RF MOSFET family, specifically engineered for wireless communication infrastructure. It serves as a critical active element in power amplifier stages, bridging low-level signal processing with high-power transmission requirements in mobile telephony devices.
Replacement Considerations
Consult official cross-reference lists for direct substitutes. Verify that any alternative maintains identical frequency range, power handling, and package dimensions to ensure mechanical and electrical compatibility without redesigning the host circuit board.
