MRFE6S9060NR1

Overview

The MRFE6S9060NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a maximum drain-source voltage of 66 Vdc and a maximum operation voltage of 32 Vdc. The device features integrated ESD protection rated at HBM Class 2, Machine Model Class B, and Charge Device Model Class III. It is housed in a TO-270-2 plastic package (CASE 1265-09) capable of withstanding junction temperatures up to 225°C. Thermal resistance from junction to case ranges from 0.77 to 0.88 °C/W depending on power dissipation levels.

Feature Summary

• Broadband performance suitable for large-signal common-source amplifier applications
• Integrated electrostatic discharge protection mechanisms
• High thermal capability with 225°C junction temperature rating
• Designed for enhanced ruggedness handling high voltage overdrive

Applications

• Single-carrier N-CDMA base station equipment
• GSM EDGE amplifiers
• GSM amplifiers
• Industrial heating systems

Procurement Notes

Verify the specific ordering suffix R1 confirms tape and reel packaging containing 500 units per 24 mm reel. Confirm RoHS compliance status matches current manufacturing standards. Ensure the component meets moisture sensitivity level 3 requirements for storage and soldering processes. Validate that the TO-270-2 package style aligns with the intended PCB footprint and mounting method.

Selection Notes

Select this lateral MOSFET for designs requiring high gain and broadband operation within the 850 to 960 MHz range. Consider the 28 Vdc typical operating voltage and the requirement for appropriate bias networks. Evaluate thermal management needs given the 225°C junction limit and specified thermal resistance values. Ensure the application supports the necessary input and output impedance matching for optimal power transfer.

Part Context

This component belongs to the Freescale Semiconductor RF Power Field Effect Transistor family, now part of NXP Semiconductors. It is categorized as a single-channel lateral N-Channel MOSFET optimized for linear amplifier applications. The device represents a solution for high-power RF transmission in cellular infrastructure and industrial bands.

Replacement Considerations

Consult official documentation for direct substitutes. Verify pinout compatibility and electrical parameters such as breakdown voltage and thermal characteristics before substitution.

FAQ

What is the maximum junction temperature for the MRFE6S9060NR1?

The maximum operating junction temperature is 225°C.

How is the ESD protection characterized for this device?

It meets Human Body Model Class 2, Machine Model Class B, and Charge Device Model Class III minimum ratings.

What is the typical power gain at 880 MHz for N-CDMA applications?

The typical power gain is 21.1 dB under standard test conditions.