MRFE6S9125NBR1

Overview

The MRFE6S9125NBR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a maximum drain-source voltage of 66 Vdc and a maximum operation voltage of 32 Vdc, with a case operating temperature of 150 °C and junction temperature up to 225 °C. The device provides 125 W CW output power at 920-960 MHz with 62% drain efficiency. In GSM EDGE mode at 920-960 MHz, it delivers 60 Watts average output power with 40% efficiency and 1.8% rms EVM. For N-CDMA applications at 880 MHz, it achieves 27 Watts average output power with 31% efficiency and -45.7 dBc ACPR.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection meeting specified industry standards
• Capable of handling high voltage standing wave ratio (VSWR) conditions under overdrive scenarios

Applications

• Single-carrier N-CDMA base station equipment
• GSM EDGE base station amplifiers
• Broadband commercial and industrial RF power amplifiers

Procurement Notes

Verify the specific ordering suffix R1 indicates tape and reel packaging containing 500 units per 44 mm reel. Confirm that the component is sourced from Freescale Semiconductor or its successor entity, NXP Semiconductors. Ensure compatibility with TO-272 WB-4 plastic packages and validate RoHS compliance status against current environmental declarations before procurement.

Selection Notes

Select this component for large-signal common-source amplifier applications requiring high gain and broadband performance in 28 volt base station equipment. Consider the internal matching features to reduce external component count. Evaluate thermal management requirements given the 225 °C junction temperature capability and verify suitability for ruggedness requirements involving high VSWR loads.

Part Context

This part belongs to the MRFE6S9125 series of N-Channel Enhancement-Mode Lateral MOSFETs. It is housed in a TO-272 WB-4 plastic package (Case 1484-04). The device is characterized using series equivalent large-signal impedance parameters. It is designed specifically for use in 28 volt base station equipment across frequencies up to 1000 MHz.

Replacement Considerations

The MRFE6S9125NR1 is the non-reel version of this component. Verify pinout and thermal characteristics match when substituting between reel and tray configurations.