MRFE6S9125NR1

Overview

The MRFE6S9125NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a maximum drain-source voltage of 66 Vdc and supports a case operating temperature of 150 °C with a junction temperature capability of 225 °C. The device delivers 27 W average power in single-carrier N-CDMA applications, 60 W average power in GSM EDGE, and 125 W continuous wave output in the 920-960 MHz band. It features internal input matching, integrated ESD protection, and RoHS compliance.

Feature Summary

• Broadband performance optimized for frequencies up to 1000 MHz
• Internally matched input network for simplified circuit design
• Integrated electrostatic discharge (ESD) protection
• High thermal capability with 225°C junction temperature rating

Applications

• Large-signal common-source amplifier applications in 28 volt base station equipment
• Single-carrier N-CDMA systems
• GSM EDGE modulation applications
• Standard GSM communication applications

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the ordering suffix 'R1' corresponds to the specified reel packaging format. Ensure compatibility with existing system voltage requirements and thermal management infrastructure before integration.

Selection Notes

Select this component for designs requiring high gain and broadband operation within the 860-960 MHz range. Evaluate thermal resistance characteristics against the specific heat sink configuration. Verify that the internal input matching aligns with the source impedance requirements of the driving stage.

Part Context

This device belongs to the MRFE6S9125N series of RF Power Field Effect Transistors manufactured by Freescale Semiconductor. It utilizes a TO-270 plastic package and is characterized using series equivalent large-signal impedance parameters for accurate modeling in broadband amplifier circuits.

Replacement Considerations

The MRFE6S9125NBR1 serves as a verified alternative within the same product family. Both variants share identical electrical specifications and functional capabilities.

FAQ

What is the maximum junction temperature capability?

The device is capable of operating at a maximum junction temperature of 225 °C.

Does the device require external input matching components?

No, the device features an internally matched input network to simplify application design.

What is the typical drain efficiency in GSM EDGE applications?

In GSM EDGE applications at 60 Watts average output power, the typical drain efficiency is 40%.