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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：880MHz
- Gain：19.2dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：950 mA
- Power - Output：27W
- Voltage - Rated：66 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-957A
- Supplier Device Package：NI-780H-2L
- Configuration：-
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Overview
The MRFE6S9130HR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for base station applications in the 865 to 960 MHz frequency range. It operates at a drain-source voltage of 28 Vdc with a maximum rating of 66 Vdc. At 880 MHz, it delivers 27 Watts average output power with a typical power gain of 19.2 dB and drain efficiency of 30.5%. The device features integrated ESD protection and is qualified for operation up to 32 Vdd.
Feature Summary
- Internally matched for ease of use
- Capable of handling 10:1 VSWR under overdrive conditions
- Integrated ESD protection
- Characterized with series equivalent large-signal impedance parameters
Applications
- N-CDMA base stations
- GSM base stations
- GSM EDGE base stations
- Multicarrier amplifier applications
Procurement Notes
Verify the datasheet revision history and specific test conditions against your design requirements. Confirm that the NI-780 package dimensions align with your thermal management strategy. Ensure compliance with RoHS standards as documented in the product specifications.
Selection Notes
Select this component for wideband RF power amplification where high ruggedness is required. Consider its internal matching capabilities to simplify circuit design. Evaluate thermal resistance values to ensure adequate heat dissipation for continuous wave operations within specified junction temperature limits.
Part Context
This part belongs to the MRFE6S9130H family of RF power field effect transistors manufactured by Freescale Semiconductor (now NXP). It is specifically engineered for cellular infrastructure, providing reliable performance in demanding multicarrier environments across the 800 MHz band.
Replacement Considerations
MRFE6S9130HSR3
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 225 °C.
How does the device handle mismatched loads?
It is capable of handling a 10:1 VSWR at 32 Vdc, 880 MHz, with 3 dB overdrive.
What packaging format is used for the R3 suffix?
The R3 suffix indicates the device is supplied in tape and reel format, containing 250 units per 56 mm, 13 inch reel.
