MRFE6S9160HR3

Overview

The MRFE6S9160HR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for base station applications in the 865 to 960 MHz frequency range. It operates at a drain-source voltage of 28 Vdc with a maximum rating of 66 Vdc. The device delivers 35 Watts average output power at 880 MHz, achieving a typical power gain of 21 dB and drain efficiency of 31%. It features internal input matching, integrated ESD protection, and ruggedness capable of handling 10:1 VSWR under overdrive conditions.

Feature Summary

• Designed for multicarrier amplifier applications in N-CDMA, GSM, and GSM EDGE base stations
• Internally matched for ease of use with series equivalent large-signal impedance parameters
• Integrated electrostatic discharge (ESD) protection compliant with Human Body Model Class 1A
• Qualified for enhanced ruggedness capable of handling high VSWR under overdrive conditions

Applications

• N-CDMA base station amplifiers
• GSM base station amplifiers
• GSM EDGE base station amplifiers
• Multicarrier amplifier designs

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status as specified in the datasheet. Ensure proper thermal management design adheres to junction-to-case thermal resistance limits. Validate that system biasing remains within the qualified maximum drain-source voltage of 32 Vdc for optimal reliability.

Selection Notes

Select this component for linear RF power amplification in cellular infrastructure operating between 865 and 960 MHz. Consider the 28 Vdc nominal operation and 35 W average power capability for single-carrier N-CDMA signals. Evaluate thermal constraints based on the specific case temperature requirements for continuous wave or pulsed operations.

Part Context

This part belongs to the MRFE6S9160H series of RF Power Field Effect Transistors manufactured by Freescale Semiconductor. The series includes variants such as the MRFE6S9160HSR3, which shares identical electrical characteristics but differs in packaging format. These devices are lateral N-channel RF power MOSFETs optimized for wireless communication infrastructure.

Replacement Considerations

The MRFE6S9160HSR3 is a direct functional substitute within the same series, offering identical electrical performance. Verify package compatibility when substituting, as the HS suffix indicates a different physical housing configuration compared to the standard HR3 reel packaging.