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The MRFE6S9160HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for base station applications in the 865 to 960 MHz frequency range. It operates with a drain-source voltage of up to 66 Vdc and gate-source voltage limits between -0.5 and +12 Vdc. The device features a maximum operating junction temperature of 225 °C and case operating temperature of 150 °C. Thermal resistance from junction to case is 0.31 °C/W at 160 W CW output power. The component utilizes the NI-780 package style.
Verify the specific ordering suffix against current manufacturer documentation, as availability and packaging formats may have changed since the original datasheet release. Confirm RoHS compliance status and material declarations through official channels before procurement. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation.
Select this component for broadband RF power amplification within the 865 to 960 MHz spectrum. Evaluate thermal design requirements based on the specified junction temperature limits and thermal resistance characteristics. Consider the internal matching network when designing input and output circuits to optimize gain and efficiency performance under varying load conditions.
This lateral N-channel RF power MOSFET belongs to the MRFE6S9160H family developed by Freescale Semiconductor, now part of NXP Semiconductors. The product line targets cellular infrastructure markets requiring robust power amplification capabilities. The device represents a specialized solution for wideband communication standards prevalent in mobile telecommunications networks.
Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts and thermal specifications carefully when evaluating potential replacements to ensure compatibility with existing board layouts and cooling systems.