MRFE6S9205HSR3

Overview

The MRFE6S9205HSR3 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 66 Vdc and gate-source voltage of 12 Vdc, with a maximum junction temperature of 225 °C. The device delivers 58 W average output power in single-carrier W-CDMA at 880 MHz with 28 V supply. It features integrated ESD protection, internal input matching, and RoHS compliance.

Feature Summary

• Optimized for Doherty amplifier configurations
• Internally matched for ease of use
• Integrated electrostatic discharge (ESD) protection
• Qualified for operation up to 32 VDD

Applications

• Broadband commercial base station equipment
• Industrial RF amplifier applications
• Large-signal common-source amplifiers

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm package type and reel specifications. Confirm component availability status as manufacturing transitions may affect supply continuity. Ensure compatibility with existing thermal management designs given the specified junction temperature limits.

Selection Notes

Select this component for wideband applications requiring high gain and ruggedness. Verify that the NI-880 package dimensions fit the PCB layout constraints. Ensure the biasing circuit supports the required quiescent current and voltage levels for optimal performance within the 865-900 MHz bandwidth.

Part Context

This part belongs to the MRFE6S9205H series of RF power LDMOS transistors from Freescale Semiconductor. These devices are engineered for demanding RF environments where broadband performance and linearity are critical. The series includes variants with different packaging options to suit various assembly requirements.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinouts and thermal characteristics when considering equivalent parts from other manufacturers.