ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V TO270-4
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：1.8MHz ~ 600MHz
- Gain：27dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：100 mA
- Power - Output：300W
- Voltage - Rated：133 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-270AB
- Supplier Device Package：TO-270 WB-4
- Configuration：Dual
Download product information
Overview
The MRFE6VP5300NR1 is an RF power LDMOS transistor manufactured by NXP Semiconductors. It is a dual-channel, enhancement-mode lateral MOSFET designed for high ruggedness applications. The device operates with a rated drain voltage of 50 V and delivers 300 W of continuous wave output power at 230 MHz. It utilizes a TO-270AB surface-mount package to facilitate integration into demanding RF systems.
Feature Summary
- Dual-channel LDMOS architecture providing high power density
- Enhancement-mode operation for simplified biasing
- High ruggedness design tolerant of severe load mismatches
- Wideband frequency coverage from 1.8 to 600 MHz
Applications
- Industrial laser and plasma exciters
- Analog and digital broadcast transmitters
- Aerospace and defense radio systems
- Land mobile radio infrastructure
Procurement Notes
Verify the specific suffix 'NR1' against current NXP documentation to confirm packaging and environmental compliance status. Check for End-of-Life notifications or obsolescence warnings prior to procurement. Ensure compatibility with existing thermal management solutions for the TO-270AB package. Confirm lead-free and halogen-free certifications if required by project specifications.
Selection Notes
Select this component for wideband RF power amplification requiring high reliability under mismatched load conditions. The 50 V rating and 300 W output suit industrial and broadcast environments. Evaluate thermal resistance requirements for the TO-270AB package. Consider the dual-channel configuration for balanced power distribution in amplifier designs operating within the 1.8 to 600 MHz range.
Part Context
This part belongs to NXP's MRFE6VP series of high ruggedness RF power LDMOS transistors. These devices are engineered for demanding applications where standard components may fail due to high Voltage Standing Wave Ratio (VSWR) conditions. The series supports both analog and digital modulation schemes across broad frequency bands.
Replacement Considerations
Consult official NXP substitution guides for verified alternatives. Cross-reference electrical parameters such as gain, efficiency, and breakdown voltage when evaluating potential replacements.
