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The MRFE6VP5600HR5 is a lateral N-channel broadband RF power MOSFET designed for high ruggedness applications. It operates within the 1.8 to 600 MHz frequency range and delivers 600 W continuous wave (CW) output at 50 Vdc. The device features unmatched input and output designs, enabling wide frequency utilization. It is qualified for up to 50 Vdd operation and can handle load mismatches of 65:1 VSWR at 230 MHz across all phase angles. The component includes integrated ESD protection with an extended negative gate-source voltage range.
Verify the specific ordering suffix R5 against current manufacturer documentation to confirm tape and reel specifications. Confirm availability status as the product may be subject to end-of-life transitions or discontinuation notices. Ensure compliance with RoHS directives and material declarations prior to procurement. Validate that the package style matches the required NI-1230 form factor for integration.
Select this component for applications requiring high power density in the Sub-GHz spectrum. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the device's capability for single-ended or push-pull configurations during circuit topology design. Verify biasing conditions to ensure linear operation and optimal drain efficiency within the target frequency band.
This part belongs to the MRFE6VP5600H family of high ruggedness lateral N-channel enhancement-mode MOSFETs. The HR5 suffix indicates a specific tape and reel packaging option containing 50 units per 13-inch reel with a 56 mm tape width. This variant shares core electrical characteristics with other suffixes like HR6 but differs in shipping configuration.
Consult official substitution lists for equivalent parts from the same manufacturer family. Verify pin compatibility and thermal footprint alignment when considering alternative packages such as NI-1230S. Cross-reference maximum ratings to ensure adequate margin for voltage and temperature limits.