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The MRFE6VP5600HSR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for industrial, broadcast, aerospace, and land mobile applications. It operates from 1.8 to 600 MHz with unmatched input and output designs. The device delivers 600 W pulsed peak power at 230 MHz under typical conditions (VDD = 50 V, IDQ = 100 mA). It features integrated ESD protection and is qualified for up to 50 V drain-source voltage operation.
Verify the specific suffix against official documentation to confirm packaging details. The R5 suffix indicates tape and reel packaging containing 50 units on a 13-inch reel with 56 mm tape width. Confirm RoHS compliance status directly through authorized channels or manufacturer certificates before procurement.
Select this component for linear large-signal amplifier applications requiring broadband performance across 1.8 to 600 MHz. Ensure biasing supports Class C operation due to the extended negative gate-source voltage range. Verify thermal management capabilities meet the maximum junction temperature requirements for continuous wave or pulsed duty cycles.
This part belongs to the MRFE6VP5600H family of high ruggedness RF power LDMOS transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. The HS variant utilizes the NI-1230S package style. These devices are engineered for environments demanding enhanced reliability and tolerance to severe electrical stress conditions.
Consult official substitution lists for verified alternatives. The MRFE6VP5600HR5 shares identical electrical characteristics but differs in packaging configuration.