MRFE6VP5600HSR5

MRFE6VP5600HSR5

$144.25
  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-

SKU:3bc09f0acc2c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Bulk
  • Technology:LDMOS (Dual)
  • Frequency:1.8MHz ~ 600MHz
  • Gain:25dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:600W
  • Voltage - Rated:130 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-1230-4S
  • Supplier Device Package:NI-1230-4S
  • Configuration:2 N-Channel

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MRFE6VP5600HSR5

Overview

The MRFE6VP5600HSR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for industrial, broadcast, aerospace, and land mobile applications. It operates from 1.8 to 600 MHz with unmatched input and output designs. The device delivers 600 W pulsed peak power at 230 MHz under typical conditions (VDD = 50 V, IDQ = 100 mA). It features integrated ESD protection and is qualified for up to 50 V drain-source voltage operation.

Feature Summary

  • Unmatched input and output configurations enabling wide frequency range utilization
  • High ruggedness capable of handling extreme load mismatches
  • Integrated electrostatic discharge (ESD) protection

Applications

  • Industrial laser and plasma exciters
  • Analog and digital broadcast transmitters
  • Aerospace communication systems
  • Radio and land mobile equipment

Procurement Notes

Verify the specific suffix against official documentation to confirm packaging details. The R5 suffix indicates tape and reel packaging containing 50 units on a 13-inch reel with 56 mm tape width. Confirm RoHS compliance status directly through authorized channels or manufacturer certificates before procurement.

Selection Notes

Select this component for linear large-signal amplifier applications requiring broadband performance across 1.8 to 600 MHz. Ensure biasing supports Class C operation due to the extended negative gate-source voltage range. Verify thermal management capabilities meet the maximum junction temperature requirements for continuous wave or pulsed duty cycles.

Part Context

This part belongs to the MRFE6VP5600H family of high ruggedness RF power LDMOS transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. The HS variant utilizes the NI-1230S package style. These devices are engineered for environments demanding enhanced reliability and tolerance to severe electrical stress conditions.

Replacement Considerations

Consult official substitution lists for verified alternatives. The MRFE6VP5600HR5 shares identical electrical characteristics but differs in packaging configuration.

MRFE6VP5600HSR5MRFE6VP5600HSR5
$144.25
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