MRFE6VP5600HSR6

Overview

The MRFE6VP5600HSR6 is a lateral N-channel broadband RF power MOSFET from the MRFE6VP5600H series, manufactured by NXP Semiconductors. It operates within a frequency range of 1.8 MHz to 600 MHz and delivers 600 W continuous wave (CW) output power at a drain voltage of 50 V. The device utilizes the CFM4F package and is supplied in reel packaging.

Feature Summary

• Broadband operation across 1.8 MHz to 600 MHz
• High power capability with 600 W CW output
• Lateral N-channel RF MOSFET technology

Applications

• Broadband RF power amplification
• Sub-GHz communication systems
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify component authenticity through authorized NXP distributors or partners. Confirm RoHS compliance status via Certificate of Analysis. Check for End-of-Life notices as availability may be limited. Ensure proper handling for sensitive semiconductor devices during storage and assembly.

Selection Notes

Select this component for applications requiring high power density over a wide frequency band. Consider thermal management requirements due to 600 W output. Evaluate compatibility with 50 V supply rails. Compare against lower power variants like MRFE6VP5150N if power requirements are reduced.

Part Context

Part of the MRFE6VP5600H family of broadband RF power LDMOS transistors. Designed for robust performance in demanding RF environments. Offers high gain and efficiency compared to previous generation devices. Suitable for replacing older discrete solutions in compact designs.

Replacement Considerations

Direct substitutes include MRFE6VP5600HR5 and MRFE6VP5600HR6 within the same family. Verify pinout and thermal pad configurations match existing PCB layouts. Consult NXP documentation for any design-in changes required when transitioning between package variants.