MRFE6VP61K25HR5

Overview

The MRFE6VP61K25HR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for wideband RF power applications. It operates across a frequency range of 1.8 to 600 MHz with a maximum drain-source voltage of 133 Vdc and a total device dissipation of 1333 W at 25°C case temperature. The transistor delivers up to 1250 W continuous wave output power at 50 Vdd, characterized by a typical power gain of 24.0 dB and drain efficiency of 74.0% at 230 MHz under pulsed conditions. It features unmatched input and output designs suitable for single-ended or push-pull configurations.

Feature Summary

• High ruggedness construction engineered for demanding industrial environments requiring tolerance to severe load mismatches.
• Unmatched input and output network design enabling broad frequency utilization without complex matching networks.
• Integrated electrostatic discharge protection mechanisms ensuring enhanced reliability during handling and operation.
• Optimized for linear applications with appropriate biasing, supporting extended power ranges from 30 V to 50 V.

Applications

• High VSWR industrial equipment including laser and plasma exciters
• Analog and digital broadcast transmission systems
• Aerospace communication and radar subsystems
• Radio and land mobile two-way communication infrastructure

Procurement Notes

Verify the specific suffix HR5 against the official datasheet to confirm tape and reel packaging specifications. Confirm that the ordering part number matches the exact electrical characteristics required for the target application. Ensure compatibility with the NI-1230H-4S package dimensions for proper thermal management and mechanical integration into the final assembly.

Selection Notes

Select this component when designing wideband amplifiers operating between 1.8 and 600 MHz that require high power density. Consider its suitability for linear modes where appropriate biasing is applied. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for continuous wave operations. Verify that the system can support the required gate-source voltage thresholds for optimal performance.

Part Context

This device belongs to the MRFE6VP61K25 series of RF Power LDMOS Transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. The series includes variants such as MRFE6VP61K25HR6, MRFE6VP61K25HSR5, and MRFE6VP61K25GSR5, which share similar electrical profiles but differ in packaging and shipping formats. These transistors are engineered for high-power, high-efficiency RF amplification in challenging electromagnetic environments.

Replacement Considerations

MRFE6VP61K25HR6

FAQ

What is the maximum drain-source voltage rating for the MRFE6VP61K25HR5?

The maximum drain-source voltage (VDSS) rating is -0.5 to +133 Vdc.

Can the MRFE6VP61K25HR5 be used in a push-pull configuration?

Yes, the device is designed to be used in either single-ended or push-pull configurations due to its unmatched input and output design.

What is the typical power gain at 230 MHz?

The typical power gain (Gps) is 24.0 dB at 230 MHz under pulsed conditions with VDD = 50 Volts and IDQ = 100 mA.