MRFE6VP61K25HSR5

Overview

The MRFE6VP61K25HSR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET RF power LDMOS transistor. It operates within the 1.8 to 600 MHz frequency range and supports up to 50 V drain-source voltage. The device delivers 1250 W continuous wave output at 230 MHz with 74.6% drain efficiency. It features unmatched input and output designs for wideband utilization, suitable for single-ended or push-pull configurations. The component includes integrated ESD protection and is characterized with series equivalent large-signal impedance parameters.

Feature Summary

• High ruggedness construction designed for high VSWR industrial applications
• Unmatched input and output designs enabling wide frequency range utilization
• Integrated ESD protection with extended negative gate-source voltage range

Applications

• High VSWR industrial laser and plasma exciters
• Analog and digital broadcast systems
• Aerospace radio and land mobile communications

Procurement Notes

Verify the specific package variant against the datasheet before procurement. The HS suffix indicates the NI-1230S-4S package configuration. Confirm that the R5 suffix matches the required tape and reel quantity of 50 units on a 13-inch reel. Ensure compatibility with the intended thermal management solution given the maximum junction temperature rating.

Selection Notes

Select this component for broadband RF power amplifier designs requiring high output power across the 1.8 to 600 MHz spectrum. The device is optimized for linear applications with appropriate biasing and supports operation from 30 V to 50 V. Consider the push-pull configuration capability for balanced circuit designs requiring high power density and improved thermal distribution.

Part Context

This part belongs to the MRFE6VP61K25H family of wideband RF power LDMOS transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. The family includes variants such as HR6, HR5, and GSR5, distinguished primarily by packaging and shipping formats. These devices are engineered for robust performance in demanding RF environments where load mismatch tolerance is critical.

Replacement Considerations

MRFE6VP61K25HR5

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Does the device support single-ended operation?

Yes, the device can be used in either single-ended or push-pull configurations.

What is the drain-source breakdown voltage?

The minimum drain-source breakdown voltage is 133 Vdc.