MRFE6VP61K25HSR6

Overview

The MRFE6VP61K25HSR6 is a high ruggedness N-channel enhancement-mode lateral MOSFET RF power transistor. It operates across a wide frequency range of 1.8 to 600 MHz and supports up to 50 V drain-source voltage. The device delivers 1250 W continuous wave output power at 230 MHz with 74.6% drain efficiency. It features unmatched input and output designs, suitable for single-ended or push-pull configurations. The R6 suffix indicates packaging in tape and reel format containing 150 units.

Feature Summary

• High ruggedness design capable of withstanding extreme load mismatches exceeding 65:1 VSWR without degradation
• Wideband operation spanning from 1.8 MHz to 600 MHz utilizing unmatched input and output architectures
• Integrated electrostatic discharge protection allowing improved Class C operation with extended negative gate-source voltage range

Applications

• High VSWR industrial applications including laser and plasma exciters
• Analog and digital broadcast systems
• Aerospace communication equipment
• Radio and land mobile transceivers

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm package type and quantity. Confirm RoHS compliance status and environmental declarations prior to procurement. Ensure the supplier provides valid traceability documents matching the original manufacturer specifications.

Selection Notes

Select this component for broadband RF power amplification requiring high tolerance to impedance mismatches. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify biasing circuits support the required quiescent current and gate threshold characteristics for linear operation.

Part Context

This device belongs to the MRFE6VP61K series of wideband RF power LDMOS transistors manufactured by NXP Semiconductors. It represents a high-power solution designed for demanding environments where reliability under mismatched load conditions is critical. The product line emphasizes robust performance across multiple frequency bands.

Replacement Considerations

Consult official substitution lists for equivalent devices within the same ruggedness class. Verify pinout compatibility and thermal interface dimensions before replacing existing components in established designs.

FAQ

What is the maximum VSWR the device can withstand?

The device is qualified to withstand a VSWR greater than 65:1 at all phase angles without experiencing device degradation.

Can the MRFE6VP61K25HSR6 be used in a push-pull configuration?

Yes, the device is designed to be utilized in either single-ended or push-pull amplifier configurations.

What does the R6 suffix indicate regarding packaging?

The R6 suffix denotes that the device is supplied in tape and reel packaging with a quantity of 150 units per reel.