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The MRFE6VP6300GSR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for broadband RF power applications. It operates within the 1.8 to 600 MHz frequency range and supports up to 50 Vdc drain-source voltage. The device delivers 300 Watts of continuous wave output power and 300 Watts of pulsed peak power with a 20% duty cycle at 100 microseconds pulse width. It features unmatched input and output designs, allowing wide frequency utilization and suitability for linear applications with appropriate biasing.
Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Confirm current manufacturing status as availability may vary by region. Ensure compliance with relevant environmental directives such as RoHS before procurement. Contact authorized distributors for precise supply chain details.
Select this component for designs requiring high power density across a wide frequency band. Evaluate thermal management requirements based on junction-to-case thermal resistance. Verify that the application circuit can support the necessary gate bias voltages and quiescent currents for optimal linearity and efficiency.
This part belongs to the MRFE6VP6300 series of lateral N-channel RF power MOSFETs. It is manufactured by Freescale Semiconductor, which is now part of NXP Semiconductors. The series is characterized by high breakdown voltage and robust performance in demanding RF environments.
Consult official substitution guides for compatible alternatives. Verify pin compatibility and electrical parameters before replacing existing components in established designs.