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The MRFE6VP8600HSR5 is a silicon N-channel RF MOSFET transistor from the VHV6 series, designed for high-power applications. It operates within a frequency range of 470 MHz to 860 MHz and delivers an output power of 600 W. Key electrical parameters include a drain-source breakdown voltage (Vds) of 140 V, continuous drain current (Id) of 20 A, and a maximum power dissipation (Pd) of 1.52 kW. The device features a gain of 18.8 dB and a minimum forward transconductance of 15.6 S. It utilizes the NI-1230 surface-mount package and supports a maximum operating temperature of +150°C.
Verify component authenticity through authorized NXP channels due to End-of-Life status. Confirm RoHS compliance documentation matches specific manufacturing lot requirements. Ensure packaging integrity for reel or cut-tape formats during handling. Validate that the NI-1230 footprint aligns with existing PCB designs before procurement.
Select this component for designs requiring high linearity and efficiency in the VHF/UHF bands. Consider the 140 V breakdown voltage for robustness against load mismatches. Evaluate thermal management solutions capable of handling 1.52 W/°C junction-to-case thermal resistance. Compare against lower-power variants if system constraints allow reduced output specifications.
This part belongs to the MRFE6VP8600H family of lateral DMOS transistors. It shares core electrical characteristics with the MRFE6VP8600HR5 variant, differing primarily in packaging configuration. The series is engineered for demanding RF power amplification tasks where reliability and wide bandwidth are critical operational requirements.
Public confirmed substitute part numbers: None available.