MRFE6VP8600HSR6

Overview

The MRFE6VP8600HSR6 is a silicon N-channel RF MOSFET transistor from the MRFE6VP8600H series, manufactured by NXP Semiconductors. It operates within a frequency range of 470 MHz to 860 MHz and delivers a continuous wave output power of 600 W at a drain voltage of 50 V. Key electrical parameters include a maximum drain-source breakdown voltage of 140 V, a continuous drain current of 20 A, and a forward transconductance minimum of 15.6 S. The device features a gain of 18.8 dB and a maximum operating temperature of +150 C. It is housed in an NI-1230 surface-mount package with a power dissipation rating of 1.52 kW.

Feature Summary

• High-power RF performance delivering 600 W output in the 470–860 MHz band
• Robust thermal capability with a maximum junction temperature of +150 C
• Broadband operation suitable for multi-band applications without retuning

Applications

• Commercial broadcast transmission systems
• Amateur radio high-power amplifiers
• Industrial, scientific, and medical (ISM) equipment

Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to obsolescence notices. Confirm specific suffix designations against official datasheets to ensure correct packaging and quality certifications. Cross-reference RoHS compliance status with current regulatory requirements before integration into final assemblies.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the VHF/UHF spectrum. Ensure the printed circuit board layout supports the NI-1230 package thermal requirements. Verify that the driving circuitry can handle the gate threshold voltage and provide adequate bias stability for optimal performance under varying load conditions.

Part Context

This device belongs to the MRFE6VP8600H family of lateral N-channel RF power MOSFETs designed for broadband applications. It represents a high-power segment of NXP's RF portfolio, engineered for reliability in demanding transmission environments. The series utilizes advanced silicon technology to achieve high power density and robustness against mismatched loads.

Replacement Considerations

Consult official NXP documentation for qualified substitutes. The MRFE6VP8600HR5 is a related variant within the same family; verify pinout and electrical equivalence before substitution.