MRFE8VP8600HR5

Overview

The MRFE8VP8600HR5 is a dual N-channel RF power LDMOS transistor from the MRFE8VP8600H series, manufactured by NXP Semiconductors (formerly Freescale). It operates within a frequency range of 470 MHz to 860 MHz. The device delivers an average output power of 140 W with a gain of 21 dB at 50 V drain bias. Key electrical parameters include a continuous drain current of 2.8 A and a gate-source threshold voltage of 1.3 V. It features a NI-1230S-4S surface-mount package, supports a maximum junction temperature of +150°C, and has a power dissipation rating of 1.25 kW.

Feature Summary

• Dual N-channel configuration for balanced RF power amplification
• Broadband operation capability across the 470 MHz to 860 MHz spectrum
• High efficiency performance with 21 dB gain at rated power levels

Applications

• Base station power amplifiers in cellular infrastructure
• Broadband RF signal generation systems
• Industrial, Scientific, and Medical (ISM) equipment requiring high-power RF sources

Procurement Notes

Verify component authenticity through authorized NXP Semiconductors distributors or certified partners. Confirm that the part number matches the specific suffix requirements for reel packaging. Ensure compliance with RoHS directives as indicated in official documentation. Request original manufacturer datasheets to validate technical specifications against current production standards before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring stable 140 W output power in the 470–860 MHz band. Consider the NI-1230S-4S package dimensions for PCB layout compatibility. Evaluate thermal management solutions given the 1.25 kW dissipation rating. Compare gain characteristics against system requirements to ensure adequate signal amplification without excessive linearity distortion.

Part Context

This device belongs to the MRFE8VP8600H family of RF power transistors designed for robust performance in demanding RF environments. It represents a transition from Freescale Semiconductor to NXP Semiconductors branding while maintaining established technical specifications. The component utilizes Silicon LDMOS technology optimized for high-voltage RF applications.

Replacement Considerations

Consult official NXP Semiconductors substitution guides for verified alternatives. Cross-reference pinout compatibility and thermal resistance values when evaluating potential replacements.