MRFG35003NR5

$14.69

Description：RF MOSFET PHEMT FET 12V PLD-1.5
Series：-

SKU:f0ebed8f94bb Category: RF FETs, MOSFETs Brand: Freescale Semiconductor

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Product introduction

Product Detailed Parameters

Description：RF MOSFET PHEMT FET 12V PLD-1.5
Series：-
Mfr：Freescale Semiconductor
Package：Bulk
Technology：pHEMT FET
Frequency：3.55GHz
Gain：11.5dB
Voltage - Test：12 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：55 mA
Power - Output：3W
Voltage - Rated：15 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：PLD-1.5
Supplier Device Package：PLD-1.5
Configuration：-

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MRFG35003NR5

Overview

The MRFG35003NR5 is a Gallium Arsenide pHEMT RF Power FET manufactured by Freescale Semiconductor. It operates at 3.5 GHz with a 12 V drain supply and delivers 3 W output power at the 1 dB compression point. The device features high gain, efficiency, and linearity, designed for unmatched Class AB linear base station applications.

Feature Summary

High gain, efficiency, and linearity
Excellent phase linearity and group delay characteristics

Applications

WLL driver applications
MMDS driver applications
BWA driver applications
UMTS driver applications
Class AB linear base station applications

Procurement Notes

Verify the specific ordering suffix to confirm package type and reel specifications. Confirm RoHS compliance status as indicated by the N suffix. Ensure compatibility with PLD-1.5 plastic packages and validate thermal management requirements against maximum ratings.

Selection Notes

Select this component for high-frequency linear amplification requiring unmatched operation. Evaluate thermal resistance and case temperature limits for reliable Class AB performance. Verify input return loss and impedance matching requirements for target frequency bands.

Part Context

This part belongs to the MRFG35003 series of GaAs PHEMT transistors. It is specifically engineered for wireless local loop and broadband wireless access systems operating in the C-band spectrum.