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Product Detailed Parameters
- Description：RF MOSFET PHEMT FET 12V PLD-1.5
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：pHEMT FET
- Frequency：3.55GHz
- Gain：11dB
- Voltage - Test：12 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：80 mA
- Power - Output：4.5W
- Voltage - Rated：15 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：PLD-1.5
- Supplier Device Package：PLD-1.5
- Configuration：-
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Overview
The MRFG35005NR5 is a Gallium Arsenide PHEMT RF power field-effect transistor manufactured by Freescale Semiconductor. It operates at a center frequency of 3.55 GHz with a rated voltage of 15 V and a typical operating voltage of 12 V. The device delivers an output power of 4.5 W and provides a gain of 11 dB, drawing a maximum drain current of 80 mA. Packaged in the PLD-1.5 format, this component is engineered for high-frequency radio applications requiring reliable RF amplification.
Feature Summary
- Utilizes Gallium Arsenide PHEMT technology for enhanced RF performance
- Designed specifically for driver applications in wireless communication systems
- Operates effectively within the 1.8 to 3.6 GHz frequency range
Applications
- Wireless Local Loop (WLL) driver stages
- Multimedia Messaging Delivery System (MMDS) driver circuits
- UMTS base station or repeater driver applications
Procurement Notes
Verify the specific ordering suffix against official NXP/Freescale documentation to confirm compliance status and lead-free characteristics. Ensure the package type matches the required PLD-1.5 specification for proper thermal management and mounting. Cross-reference the datasheet revision to confirm electrical parameters align with system design requirements before procurement.
Selection Notes
Select this component when designing RF front-end modules requiring moderate power output around 4.5 W at 3.55 GHz. Consider the PLD-1.5 package constraints for PCB layout and thermal dissipation. Evaluate the 12 V operating requirement against available power supplies in the target application environment to ensure optimal biasing and efficiency.
Part Context
This part belongs to the MRFG series of Gallium Arsenide PHEMT transistors designed for RF power amplification. These devices are characterized by their suitability for driver stages in cellular and broadband wireless infrastructure. The series offers a balance of gain, linearity, and power handling capabilities for frequencies up to 3.6 GHz.
Replacement Considerations
Consult official substitution guides for direct replacements such as the MRFG35003NR5 or other variants within the MRFG family that match the 3.55 GHz frequency and PLD-1.5 package requirements.
