MRFG35005NT1

$19.03

Description：RF MOSFET PHEMT FET 12V PLD-1.5
Series：-

SKU:fac5bf378b7c Category: RF FETs, MOSFETs Brand: Freescale Semiconductor

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Product introduction

Product Detailed Parameters

Description：RF MOSFET PHEMT FET 12V PLD-1.5
Series：-
Mfr：Freescale Semiconductor
Package：Bulk
Technology：pHEMT FET
Frequency：1.8GHz ~ 3.6GHz
Gain：11dB
Voltage - Test：12 V
Current Rating (Amps)：1.7A
Noise Figure：-
Current - Test：80 mA
Power - Output：450mW
Voltage - Rated：15 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：PLD-1.5
Supplier Device Package：PLD-1.5
Configuration：-

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MRFG35005NT1

Overview

The MRFG35005NT1 is a Gallium Arsenide Pseudomorphic High Electron Mobility Transistor (GaAs pHEMT) RF power FET manufactured by Freescale Semiconductor. It operates within a frequency range of 1.8 GHz to 3.6 GHz, with a center design frequency of 3.5 GHz. The device delivers an output power of 4.5 W and requires a supply voltage of 12 V. It is packaged in a PLD-1.5 outline.

Feature Summary

Utilizes GaAs pHEMT technology for high-frequency performance
Designed as an unmatched device suitable for Class AB operation
Optimized for driver applications in wireless systems

Applications

Wireless Local Loop (WLL) driver stages
Multimedia Mobile Distribution System (MMDS) drivers
Broadband Wireless Access (BWA) amplifiers
UMTS driver applications

Procurement Notes

Verify the manufacturer designation, as NXP Semiconductors has acquired Freescale. Confirm the specific package variant, such as NT1 or NR5, matches the required reel quantity and tape specifications. Ensure the component meets RoHS compliance standards if applicable to the target assembly process. Cross-reference the datasheet revision to confirm electrical characteristics align with current production batches.

Selection Notes

Select this component for designs requiring 4.5 W output power at 3.5 GHz with a 12 V bias. It is appropriate for unmatched driver stages in Class AB configurations. Consider thermal management requirements due to the power dissipation levels. Evaluate compatibility with existing impedance matching networks for the 1.8 to 3.6 GHz operational band.

Part Context

This part belongs to the family of GaAs pHEMT power FETs designed for broadband wireless infrastructure. It serves as a driver amplifier stage, bridging lower-power control signals to higher-power final output stages. The PLD-1.5 package provides a compact form factor suitable for dense PCB layouts in communication equipment.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal pad configurations before considering alternative sources from other manufacturers.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.