MRFG35010MT1

Overview

The MRFG35010MT1 is a Gallium Arsenide PHEMT RF power field effect transistor designed for WLL, MMDS, BWA, and UMTS driver applications. It operates within the 1.8 to 3.6 GHz frequency range and is unmatched for Class AB linear base station use. At 3.55 GHz with a 12 Vdc drain supply and 180 mA quiescent current, it delivers 9 Watts output power at the 1 dB compression point with 10 dB power gain and 28% efficiency.

Feature Summary

• Designed for wideband wireless local loop and broadband wireless access driver applications
• Provides high linearity and excellent phase linearity characteristics suitable for Class AB linear amplification
• Features unmatched construction optimized for high gain and high efficiency performance

Applications

• Wireless Local Loop (WLL) driver stages
• Multimedia Messaging Distribution System (MMDS) driver stages
• Broadband Wireless Access (BWA) driver stages
• UMTS driver applications

Procurement Notes

Verify component authenticity by checking the marking code against the official datasheet specifications. Confirm the package style matches Case 466-03 Style 1. Ensure the ordering suffix corresponds to the required tape and reel quantity of 1000 units per 12 mm, 7 inch reel. Validate that the device meets the specific thermal and electrical requirements for your target application environment.

Selection Notes

Select this component when designing linear amplifier stages requiring high output power in the 1.8 to 3.6 GHz band. The device is specifically suited for applications demanding high linearity, such as those utilizing complex modulation schemes like W-CDMA. Consider the 12 Vdc operating voltage and thermal management requirements associated with its 22.7 W total device dissipation capability during system integration.

Part Context

This device belongs to the family of Gallium Arsenide PHEMT RF power transistors manufactured by Freescale Semiconductor. It is engineered to provide robust performance in radio frequency power amplification tasks. The technology leverages advanced semiconductor materials to achieve high power density and efficiency in a compact plastic package format suitable for surface mount assembly.

Replacement Considerations

The MRFG35010NT1 serves as a direct replacement. There are no form, fit, or function changes between the two parts. The N suffix indicates a transition to lead-free terminations while maintaining identical electrical and mechanical specifications.

FAQ

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (VDSS) rating is 15 Vdc.

What is the typical Adjacent Channel Power Ratio (ACPR) performance?

At 3.55 GHz with 900 mW average output power, the typical ACPR is -42 dBc for a 3GPP W-CDMA signal with 64 channels.

What packaging format is used for this component?

The device is supplied in Tape and Reel format, specifically T1 Suffix, containing 1000 units per 12 mm, 7 inch reel.