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Product Detailed Parameters
- Description：RF MOSFET PHEMT FET 12V PLD-1.5
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：pHEMT FET
- Frequency：3.55GHz
- Gain：10dB
- Voltage - Test：12 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：180 mA
- Power - Output：9W
- Voltage - Rated：15 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：PLD-1.5
- Supplier Device Package：PLD-1.5
- Configuration：-
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Overview
The MRFG35010NR5 is a Gallium Arsenide pHEMT RF Power FET designed for WLL, MMDS, BWA, and UMTS driver applications. It operates within the 1.8 to 3.6 GHz frequency range and delivers 9 Watts of output power at the 1 dB compression point (P1dB) at 3.55 GHz. The device requires a 12 Vdc drain supply voltage and features high gain, efficiency, and linearity. It is packaged in a PLD-1.5 plastic case (CASE 466-03).
Feature Summary
- Designed for unmatched Class AB linear base station applications.
- Provides excellent phase linearity and group delay characteristics.
- Features high gain, high efficiency, and high linearity.
Applications
- WLL driver applications
- MMDS driver applications
- BWA driver applications
- UMTS driver applications
Procurement Notes
Verify that the ordering suffix 'R5' corresponds to the specific tape and reel packaging configuration defined by Freescale Semiconductor. Confirm RoHS compliance status and lead-free termination specifications directly with the manufacturer or authorized distributor documentation prior to procurement.
Selection Notes
Select this component for broadband applications between 1.8 and 3.6 GHz requiring 9 Watts output power. Ensure the design accommodates a 12 Vdc drain supply and manages thermal dissipation effectively given the 22.7 W total device dissipation rating. Verify impedance matching requirements for the unmatched device topology.
Part Context
This part belongs to the MRFG35010N family of Gallium Arsenide PHEMT transistors manufactured by Freescale Semiconductor. The device is specifically engineered for high-performance RF power amplification in wireless communication infrastructure.
Replacement Considerations
MRFG35010NT1 replaced by MRFG35010ANT1.
FAQ
What is the maximum Drain-Source Voltage?
The maximum Drain-Source Voltage (VDSS) is 15 Vdc.
What is the typical Power Gain at 3.55 GHz?
The typical Power Gain (Gps) is 10 dB when operating at VDD = 12 Vdc and IDQ = 180 mA.
What is the package style?
The device uses the CASE 466-03 package, which is a PLD-1.5 Plastic Leadless package.
