MRFG35010NT1

Overview

The MRFG35010NT1 is a Gallium Arsenide PHEMT RF Power Field Effect Transistor manufactured by Freescale Semiconductor. It operates at a frequency of 3.55 GHz with an output power of 9 W and a gain of 10 dB. The device requires a 12 V supply voltage and utilizes a PLD-1.5 package. Designed for driver applications in the 1.8 to 3.6 GHz range, it supports Class AB operation.

Feature Summary

• Gallium Arsenide PHEMT technology for high-frequency performance
• Optimized for wireless local loop and broadband applications
• Suitable for unmatched Class AB driver configurations

Applications

• WLL driver applications
• MMDS driver applications
• BWA driver applications
• UMTS driver applications

Procurement Notes

Verify the manufacturer marking matches Freescale Semiconductor or NXP Semiconductors, as ownership transition occurred. Confirm the package type is PLD-1.5 and the ordering suffix is NT1 for tape-and-reel packaging. Check datasheet revision history for any parameter updates. Ensure the component is new and original, avoiding refurbished units that may exhibit degraded RF performance.

Selection Notes

Select this component when designing drivers for frequencies between 1.8 and 3.6 GHz requiring 9 W output. Consider the 12 V bias requirement and GaAs pHEMT technology characteristics. Evaluate thermal management needs for PLD-1.5 packages. Compare against similar models like MRFG35005NT1 if lower power suffices.

Part Context

This part belongs to the MRFG series of GaAs pHEMT power FETs from Freescale. These devices are engineered for linear amplifier stages in communication systems. The MRFG35010NT1 specifically targets mid-power applications in the 3.5 GHz band, bridging lower-power small-signal transistors and higher-power final stage amplifiers.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference guides for potential equivalents.