MRFG35010R5

Overview

The MRFG35010R5 is a Gallium Arsenide pHEMT RF power field-effect transistor manufactured by Freescale Semiconductor. Designed for driver applications in wireless local loop, multimedia messaging data service, broadband wireless access, and UMTS systems, it operates within the 500 MHz to 5000 MHz frequency range. The device delivers 3 Watts of output power at P1dB when operating at 3550 MHz. It functions with a drain voltage of 6 Volts and requires a quiescent drain current of 180 mA. Key electrical characteristics include a power gain of 10 dB, a drain efficiency of 27%, and an adjacent channel power ratio of -42.5 dBc measured at a 5 MHz offset within a 3.84 MHz channel bandwidth.

Feature Summary

• Engineered for unmatched integration in Class AB customer premise equipment applications.
• Provides excellent phase linearity and group delay characteristics for signal integrity.
• Combines high gain, high efficiency, and high linearity performance metrics.

Applications

• WLL (Wireless Local Loop) driver stages
• MMDS (Multichannel Multipoint Distribution Service) amplification
• BWA (Broadband Wireless Access) transmitter drivers
• UMTS (Universal Mobile Telecommunications System) base station drivers

Procurement Notes

Verify the specific revision status and RoHS compliance documentation prior to procurement. Confirm that the R5 suffix corresponds to the required tape and reel packaging configuration containing 1000 units per 12 mm, 7 inch reel. Ensure compatibility with existing thermal management solutions designed for GaAs pHEMT devices in customer premise equipment environments.

Selection Notes

Select this component for designs requiring a single-device solution for WLL, MMDS, BWA, or UMTS driver stages between 500 and 5000 MHz. The device is optimized for Class AB operation in customer premise equipment. Consider its specific 6V drain voltage requirement and 180mA quiescent current when designing bias networks. Verify that the system architecture supports unmatched configurations as the device is intended for direct integration without external matching networks.

Part Context

This part belongs to the MRFG series of Gallium Arsenide pHEMT RF power transistors from Freescale Semiconductor. These components are specifically engineered for wireless communication infrastructure and customer premise equipment. The series focuses on providing high linearity and efficiency for wideband applications such as UMTS and broadband wireless access, serving as critical driver stages in transmitter chains.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation. Consult manufacturer cross-reference guides for potential alternatives if supply constraints exist.