MRFX035HR5

Overview

The MRFX035HR5 is an NXP Semiconductors RF Power LDMOS Transistor designed for high ruggedness applications. It operates as an N-Channel Enhancement-Mode Lateral MOSFET with a frequency range of 1.8 to 512 MHz and supports up to 65 V DC drain-source voltage. The device delivers 35 W CW output power at 230 MHz with 75.8% drain efficiency. Key electrical characteristics include a breakdown voltage of 193 V, gate threshold voltage of 2.75 V, and thermal resistance of 1.3 °C/W. It features integrated ESD protection and is housed in the NI-360H-2SB package.

Feature Summary

• Unmatched input and output design enabling wide frequency range utilization from 1.8 to 512 MHz
• High ruggedness characterized for operation under extreme load mismatch conditions exceeding 65:1 VSWR
• Integrated ESD protection with extended negative gate-source voltage range suitable for Class C linear applications

Applications

• Industrial, scientific, medical (ISM) systems including laser generation, plasma generation, and particle accelerators
• Radio and VHF TV broadcast transmitters
• Aerospace HF communications and radar systems
• Mobile radio PMR base stations and HF/VHF communications equipment

Procurement Notes

Verify the specific ordering suffix R5 confirms the tape and reel configuration containing 50 units on a 32 mm tape width within a 13-inch reel. Confirm that the component matches the NI-360H-2SB package designation. Ensure the procurement aligns with the manufacturer's product longevity program requirements for assured supply availability.

Selection Notes

Select this transistor for designs requiring broadband performance across 1.8 to 512 MHz with high linearity. The device supports 50 ohm native output impedance simplifying matching networks. Consider its high breakdown voltage and thermal dissipation capabilities for robust industrial and aerospace environments requiring reliable continuous wave operation.

Part Context

This component belongs to the MRFX035H series of RF Power LDMOS Transistors manufactured by NXP Semiconductors. The series is engineered for high ruggedness and reliability in demanding RF power amplifier applications. The MRFX035HR5 variant specifically denotes the reel-packaged version of the standard MRFX035H device.

Replacement Considerations

Consult official documentation for direct substitutes. No verified public substitute part numbers are available in the provided source material.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum Drain-Source Voltage (VDSS) rating is -0.5 to +179 Vdc.

How does the device perform under severe load mismatch?

At 230 MHz with 65 Vdd, the device shows no degradation when subjected to greater than 65:1 VSWR at all phase angles with 23.5 dBm input power.

What is the typical drain efficiency at 230 MHz?

In the production test fixture at 230 MHz with 65 Vdd and 35 W CW output, the typical drain efficiency is 75.8%.