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The MRFX1K80GNR5 is a high ruggedness N-channel enhancement-mode Lateral MOSFET designed for wideband RF power applications. It operates from 1.8 to 400 MHz with a maximum drain-source voltage of 65 Vdc and breakdown voltage of 179 Vdc. The device delivers up to 1800 W CW output power at 98 MHz with 83.5% drain efficiency, or 1800 W peak pulse power at 230 MHz. It features an OM-1230G-4L plastic package, thermal resistance of 0.06 °C/W, and integrated ESD protection rated at 2500 V (HBM).
Verify the specific ordering suffix R5 indicates a 50-unit tape and reel configuration with 56 mm width on a 13-inch reel. Confirm the OM-1230G-4L plastic package designation matches the required mechanical footprint. Ensure compatibility with the manufacturer's standard terms and conditions regarding product longevity and supply assurance programs.
Select this component for designs requiring high power density across broad frequency bands. The device supports characterization from 30 to 65 V for extended power ranges. Verify thermal management capabilities against the specified junction-to-case thermal resistance. Ensure biasing circuits accommodate the integrated ESD protection characteristics for Class C operation.
This part belongs to the MRFX1K80N/GN family of wideband RF power LDMOS transistors. It shares core electrical specifications with the MRFX1K80N but utilizes the OM-1230G-4L plastic package variant. The R5 suffix denotes the specific reel packaging format for automated assembly processes.
Public confirmed substitute part numbers are not available in the provided documentation.