MRFX1K80H-230MHZ

Overview

The MRFX1K80H-230MHZ is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for wideband RF power applications from 1.8 to 400 MHz. It operates with a maximum drain-source voltage of 65 V and delivers up to 1800 W continuous wave output power. The device features unmatched input and output designs, supporting single-ended or push-pull configurations. It includes integrated ESD protection and is characterized for extended power ranges between 30 and 65 V.

Feature Summary

• Unmatched input and output design enabling wide frequency range utilization
• High breakdown voltage for enhanced reliability and ruggedness
• Integrated ESD protection with greater negative gate-source voltage range
• Suitable for linear applications with appropriate biasing

Applications

• Industrial, scientific, medical (ISM) laser generation
• Plasma generation systems
• Particle accelerators
• MRI, RF ablation and skin treatment
• Radio and VHF TV broadcast
• Aerospace HF communications and radar

Procurement Notes

Verify the specific suffix against official documentation to confirm frequency band alignment. Confirm package type and thermal requirements match the application design. Check current status as legacy components may have supply constraints. Ensure compatibility with existing PCB layouts if replacing older models. Validate electrical parameters for the specific operating conditions required.

Selection Notes

Select this component for high-power RF applications requiring wide bandwidth and high ruggedness. Consider the 65 V operation for improved efficiency and output impedance matching. Evaluate thermal management needs due to high power dissipation. Assess suitability for linear modes in broadcast or ISM environments. Verify pin-to-pin compatibility with existing 50 V designs if reusing PCBs.

Part Context

The MRFX1K80H belongs to NXP's MRFX series of 65 V LDMOS transistors. This series utilizes advanced LDMOS technology to deliver high output power while maintaining reasonable output impedance. The family is designed for industrial, medical, broadcast, aerospace, and mobile radio applications. The 65 V rating provides higher breakdown voltage and reduced system current compared to lower voltage alternatives.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.