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The MRFX600GSR5 is a wideband RF power LDMOS transistor from NXP Semiconductors, housed in the NI-780GS-4L package. It delivers 600 W continuous wave output at 230 MHz and operates across a frequency range of 1.8 to 400 MHz with a drain voltage up to 65 V. The device features an N-channel enhancement-mode structure with a drain-source breakdown voltage of 179 V and a forward transconductance of 33.6 S. It supports single-ended or push-pull configurations and includes integrated ESD protection.
Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Confirm current product lifecycle status as availability may vary by region. Ensure compliance with RoHS directives and material declarations prior to integration into manufacturing processes.
Select this component for designs requiring high power density within the sub-GHz spectrum. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify that the application circuit can accommodate the required gate threshold voltage and quiescent current settings for optimal performance.
This device belongs to the MRFX600H family of high ruggedness lateral MOSFETs. It shares core electrical characteristics with the MRFX600H and MRFX600HS variants, differing primarily in packaging configuration. The series is engineered for demanding RF power amplifier applications requiring robust performance under mismatched load conditions.
Direct substitutes include the MRFX600H and MRFX600HS models. Verify mechanical footprint compatibility between the NI-780GS-4L and alternative packages before implementation.