MS1001

Overview

The MS1001 is an NPN bipolar RF transistor manufactured by Microsemi Corporation, designed for high-power radio frequency applications. It features a maximum collector-emitter breakdown voltage of 18V and supports a continuous collector current of 20A. The device operates with a transition frequency of 30MHz and delivers a maximum power output of 270W. Key electrical characteristics include a DC current gain (hFE) of at least 20 when tested at 5A and 5V, and a gain of 13dB. The component utilizes an M174 base mount package, allowing for robust thermal management in demanding environments.

Feature Summary

• High power capability with 270W maximum output rating
• Optimized for RF applications up to 30MHz transition frequency
• Robust construction using M174 base mount package for efficient heat dissipation
• NPN configuration suitable for high-current switching and amplification

Applications

• RF power amplification stages
• Industrial heating systems
• Radio frequency transmitters

Procurement Notes

Verify the part status carefully as the MS1001 is listed as obsolete or discontinued by the manufacturer. Sourcing may require checking secondary market distributors or evaluating alternative components from the same family. Confirm that the M174 package dimensions match your existing board layout before procurement.

Selection Notes

Select this component when designing circuits requiring high current handling up to 20A and significant power dissipation near 270W. Ensure the operating frequency remains within the 30MHz transition limit. The M174 package necessitates specific mounting hardware and thermal interface materials compatible with base-mounted devices.

Part Context

This component belongs to the category of discrete semiconductor products, specifically falling under bipolar junction transistors (BJT) designed for radio frequency use. It represents a legacy offering from Microsemi Corporation, now part of Microchip Technology, intended for specialized industrial and communication equipment where high reliability and power density are critical.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the discontinued status, engineers should consult official replacement guides or evaluate similar high-power NPN RF transistors with matching M174 footprints and comparable 18V/20A ratings.