MS1008

Overview

The MS1008 is a high-power NPN silicon RF bipolar transistor manufactured by Microsemi Corporation. Designed for demanding radio frequency applications, it features a collector-emitter breakdown voltage of 55V and a maximum continuous collector current of 10A. The device operates at frequencies up to 30MHz with a transition frequency supporting high-frequency performance. It delivers a maximum power dissipation of 233W and provides a gain of 14dB. The component utilizes emitter ballasting for stability and is housed in an M164 base-mount package, suitable for chassis installation in robust industrial or communication systems.

Feature Summary

• Utilizes emitter ballasting technology to ensure operational stability under varying conditions
• Engineered specifically for SSB communications and high-demand RF environments
• Features a rugged base-mount construction designed for efficient thermal management

Applications

• Single Sideband (SSB) communication transmitters
• High-power RF amplifier stages
• Industrial radio frequency heating systems

Procurement Notes

Verify the exact manufacturer status as the product may be listed as obsolete or end-of-life depending on the source timestamp. Confirm that the M164 package dimensions match your chassis mounting requirements before integration. Ensure compliance with RoHS and REACH regulations if required for your specific deployment environment. Cross-reference the datasheet revision to confirm electrical parameters have not changed due to manufacturing updates.

Selection Notes

Select this component when high current handling and moderate voltage ratings are required for RF amplification. The 55V rating and 10A current capacity make it suitable for specific impedance matching networks. Consider the M164 package size for thermal design constraints. Compare against alternative NPN RF transistors if higher frequency operation beyond 30MHz is necessary for the target application.

Part Context

This part belongs to the Microsemi RF bipolar transistor family, historically significant in professional communication equipment. The MS series typically denotes high-power discrete devices intended for linear amplification. As a legacy component from Microsemi, now part of Microchip, it represents established silicon technology for robust RF signal processing tasks.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the specific M164 package geometry and unique electrical characteristics, direct pin-for-pin replacements require careful verification of thermal resistance and mechanical fit.