MS1051

Overview

The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications, operating from 1 MHz to 30 MHz. It features a common emitter configuration with gold metallization and delivers 100 W output power at 12.5 volts. The device provides a minimum gain of 12.0 dB and maintains an IMD of –30 dBc. Rated for 18 V collector-emitter voltage and 20 A current, it supports up to 290 W in chassis mount configurations.

Feature Summary

• Epitaxial silicon NPN planar construction optimized for high-frequency applications
• Gold metallization for enhanced reliability and thermal performance
• Common emitter configuration supporting high-power RF generation

Applications

• HF communications systems
• High-frequency transmitter stages
• RF power amplification

Procurement Notes

Verify the manufacturer origin carefully, as Microsemi assets were acquired by Microchip Technology. Confirm that the specific unit matches the original Microsemi specifications regarding gold metallization and Class C operation. Ensure the package type aligns with chassis mounting requirements for the intended thermal management solution.

Selection Notes

Select this component when designing HF communication transmitters requiring high output power at 12.5 V. The 30 MHz upper frequency limit defines its operational bandwidth. Consider the chassis mount requirement for heat dissipation given the 100 W continuous power rating and 290 W peak capability.

Part Context

This bipolar RF transistor belongs to the family of high-power NPN devices used in radio frequency engineering. It serves as a critical active element in linear and non-linear amplifier stages where efficiency and spectral purity are prioritized for broadcast or point-to-point HF links.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.