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The MS1076 is a 28-volt epitaxial NPN silicon planar transistor designed for SSB and VHF communications. It operates at 30 MHz with a minimum gain of 12 dB and delivers 220 W PEP output power. The device utilizes emitter ballasted die geometry for ruggedness and gold metallization. It is configured in a common emitter arrangement, providing high reliability for RF applications.
The MS1076 belongs to the Microsemi RF & Microwave Transistors category, specifically engineered for HF SSB applications. It represents a specialized component within the manufacturer's portfolio of high-power RF devices, distinct from general-purpose transistors due to its specific voltage and frequency ratings.
Public confirmed substitute part numbers are not available in verified documentation. Designers should consult official Microsemi discontinuance notices or engineering change orders for approved alternatives.