MS1076

MS1076

  • Description:RF TRANS NPN 35V 30MHZ M174
  • Series:-

SKU:b0d40645619c Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 35V 30MHZ M174
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):35V
  • Frequency - Transition:30MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:12dB
  • Power - Max:320W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 7A, 5V
  • Current - Collector (Ic) (Max):16A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:M174
  • Supplier Device Package:M174
  • Grade:-
  • Qualification:-

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MS1076

Overview

The MS1076 is a 28-volt epitaxial NPN silicon planar transistor designed for SSB and VHF communications. It operates at 30 MHz with a minimum gain of 12 dB and delivers 220 W PEP output power. The device utilizes emitter ballasted die geometry for ruggedness and gold metallization. It is configured in a common emitter arrangement, providing high reliability for RF applications.

Feature Summary

  • Epitaxial NPN silicon planar construction
  • Emitter ballasted die geometry for maximum ruggedness
  • Gold metallization for enhanced performance

Applications

  • SSB communications systems
  • VHF communications equipment
  • RF amplifier stages

Part Context

The MS1076 belongs to the Microsemi RF & Microwave Transistors category, specifically engineered for HF SSB applications. It represents a specialized component within the manufacturer's portfolio of high-power RF devices, distinct from general-purpose transistors due to its specific voltage and frequency ratings.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation. Designers should consult official Microsemi discontinuance notices or engineering change orders for approved alternatives.

MS1076MS1076

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