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The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. It features an NPN configuration with a maximum collector-emitter voltage of 36V and a continuous collector current of 4.5A. The device operates at frequencies up to 30MHz and delivers 80W of power in chassis mount M113 packages. Emitter ballasting is utilized for improved thermal stability.
Verify the manufacturer source, as Microsemi Corporation was acquired by Microchip Technology. Confirm the package type matches the required M113 chassis mount specification. Check datasheet revisions for any parameter updates. Ensure the component meets specific SSB application requirements. Validate electrical ratings against system design constraints before procurement.
Select this component for high-power RF applications requiring robust thermal management. The M113 package facilitates efficient heat dissipation for chassis mounting. Consider the 36V rating and 4.5A current capacity for circuit compatibility. Verify frequency response suitability for 30MHz operations. Evaluate emitter ballasting benefits for stability in demanding environments.
The MS1226 belongs to the family of RF bipolar transistors manufactured by Microsemi Corporation, now part of Microchip Technology. These devices are engineered for high-reliability RF applications, particularly in communications equipment. The M113 package provides a standardized form factor for industrial and military-grade installations.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip or Microsemi catalogs for cross-reference data. Verify pinout and thermal characteristics when evaluating alternatives.