MS1336

Overview

The MS1336 is an NPN RF bipolar junction transistor manufactured by Microsemi Corporation. It features a maximum collector current of 8 A and a collector-emitter breakdown voltage of 18 V. The device has a transition frequency of 175 MHz and a maximum power dissipation of 70 W. DC current gain (hFE) is specified at a minimum of 20 when tested at 250 mA and 5 V. The saturation voltage is 10 dB under standard test conditions. It operates within a junction temperature range up to 200°C and utilizes the M135 base-mount package.

Feature Summary

• Designed for high-frequency RF applications with a 175 MHz transition frequency
• Capable of handling high power dissipation up to 70 W
• Constructed with an NPN silicon structure for robust performance
• Utilizes a rugged M135 base-mount package for secure installation

Applications

• RF power amplification stages
• High-frequency signal processing circuits
• Military and aerospace communication systems

Procurement Notes

Verify the component status as discontinued before procurement planning. Confirm that the M135 base-mount package dimensions match the target chassis or heatsink interface. Ensure compatibility with existing thermal management solutions given the 70 W power rating. Validate that the 18 V breakdown voltage meets the circuit requirements. Check for available cross-reference data if original supply is unavailable.

Selection Notes

Select this component for applications requiring high current handling at RF frequencies. The 8 A collector current and 70 W power rating suit demanding power amplifier designs. The M135 package facilitates direct mounting to heat sinks. Consider the 175 MHz transition frequency limit when designing for higher frequency bands. Verify that the NPN configuration aligns with the circuit topology.

Part Context

The MS1336 belongs to Microsemi's lineup of discrete RF transistors designed for specialized electronic systems. It serves as a high-power switching and amplification element in radio frequency environments. The M135 package indicates a specific form factor used in industrial and military hardware. This component represents a legacy part within the broader portfolio of bipolar junction transistors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the discontinued status, verify mechanical fit and electrical parameters against potential alternatives. Consult manufacturer obsolescence notices for recommended replacement strategies.