MS2204

Overview

The MS2204 is a discrete NPN bipolar junction transistor designed for radio frequency applications. It features a maximum collector-emitter breakdown voltage of 20V and a continuous collector current rating of 300mA. The device operates with a transition frequency of 1.09GHz and provides a gain of 10.8dB. It has a maximum power dissipation of 600mW and supports a junction temperature up to 200°C. The component utilizes an M115 base-mount package, suitable for mounting on circuit boards.

Feature Summary

• NPN RF transistor configuration optimized for high-frequency signal amplification
• High thermal stability supporting operation at elevated junction temperatures
• Base-mount mechanical design for robust physical integration

Applications

• Radio frequency signal amplification circuits
• High-frequency communication systems
• RF front-end modules requiring base-mount topology

Procurement Notes

Verify the obsolete status before procurement as the MS2204 is discontinued. Confirm availability through authorized distributors or surplus channels. Ensure the M115 package dimensions match the target board layout. Check for RoHS compliance documentation if required by specific manufacturing standards. Validate that the supplier provides genuine Microsemi components to avoid counterfeit risks.

Selection Notes

Select this component when an NPN RF transistor with a 20V breakdown and 1.09GHz transition frequency is required. The M115 base-mount package dictates the mechanical footprint and thermal management strategy. Consider the 600mW power dissipation limit during thermal design. Verify that the 300mA collector current meets the load requirements. Evaluate alternative active devices if surface-mount solutions are preferred over base-mount configurations.

Part Context

The MS2204 belongs to the category of discrete semiconductor products, specifically within the dual-polar (BJT) RF transistor segment. Manufactured by Microsemi Corporation, it serves specialized roles in RF engineering where high-frequency performance and specific mechanical mounting constraints are critical. The M115 package distinguishes it from standard surface-mount or leaded alternatives.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Due to the discontinued status, direct replacements may require evaluating equivalent NPN RF transistors with matching M115 packages, 20V ratings, and similar transition frequencies. Consult manufacturer cross-reference guides for compatible alternatives.