MS2205

Description：RF TRANS NPN 45V 1.15GHZ M105
Series：-

SKU:e39428183def Category: Bipolar RF Transistors Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 45V 1.15GHZ M105
Series：-
Mfr：Microsemi Corporation
Package：Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：45V
Frequency - Transition：1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)：-
Gain：9.5dB
Power - Max：21.9W
DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 100mA, 5V
Current - Collector (Ic) (Max)：1A
Operating Temperature：200°C (TJ)
Mounting Type：Chassis Mount
Package / Case：M105
Supplier Device Package：M105
Grade：-
Qualification：-

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MS2205

Overview

The MS2205 is a silicon NPN microwave transistor designed for pulsed applications with low duty cycles, such as IFF, DME, and TACAN. It features gold metallization and operates in common base configuration under Class C driver conditions. The device is housed in the M102 package, suitable for base mounting. It supports junction temperatures up to 200°C and offers high power handling capabilities of 1167W maximum. The transition frequency ranges from 400MHz to 500MHz, ensuring performance in RF environments.

Feature Summary

Gold metallized silicon NPN construction for enhanced reliability
Designed for Class C driver applications under pulse conditions
Common base configuration optimized for microwave frequencies
High thermal tolerance supporting elevated junction temperatures

Applications

Identification Friend or Foe (IFF) systems
Distance Measuring Equipment (DME)
Tactical Air Navigation (TACAN)

Procurement Notes

Verify component authenticity through authorized Microchip Technology channels due to discontinued status. Confirm package integrity and lead condition upon receipt. Cross-reference datasheet revisions to ensure compatibility with current design specifications. Validate that the M102 package matches thermal management requirements. Check for any specific screening levels if military standards apply.

Selection Notes

Select this component for high-power pulsed RF applications requiring robust microwave performance. Ensure the system accommodates the 400MHz to 500MHz transition frequency range. Verify that the base-mount M102 package fits the mechanical constraints. Consider the 200°C junction temperature limit for thermal design. Confirm suitability for Class C operation modes in the target circuit architecture.

Part Context

The MS2205 belongs to the family of high-power RF transistors manufactured by Microsemi Corporation, now part of Microchip Technology Inc. These components are engineered for demanding aerospace and defense radar systems. The product line emphasizes reliability in harsh environments with specialized packaging and metallization techniques to withstand extreme operational stresses.