MS2211

Overview

The MS2211 is an NPN bipolar RF transistor manufactured by Microsemi Corporation, designed for high-frequency applications within the 960MHz to 1.215GHz range. It features a maximum collector-emitter voltage of 48V and a continuous collector current capability of 900mA. The device is rated for 25W power dissipation and utilizes a chassis mount M222 package configuration.

Feature Summary

• NPN bipolar junction transistor architecture optimized for radio frequency signal amplification
• Chassis mount M222 package design facilitating thermal management in high-power environments
• Operational frequency coverage spanning 960MHz to 1.215GHz for specialized RF systems

Applications

• RF amplifier circuits
• Avionics communication systems
• High-frequency signal processing modules

Procurement Notes

Verify manufacturer documentation to confirm current production status and availability from authorized distributors. Ensure compatibility with M222 mounting requirements and validate electrical specifications against specific system design constraints before procurement.

Selection Notes

Select this component for applications requiring NPN RF performance in the UHF band with chassis mounting capabilities. Evaluate thermal dissipation needs against the 25W rating and ensure interface compatibility with existing RF circuit architectures.

Part Context

The MS2211 belongs to the Bipolar RF Transistors category from Microsemi Corporation, targeting aerospace and defense communications. It complements similar models like the MS2212, offering distinct voltage and frequency characteristics for specialized RF hardware implementations.

Replacement Considerations

Consider the MS2212 as a potential alternative if higher voltage ratings are required, though frequency ranges may differ. Verify pinout and package compatibility when substituting components in existing designs.