MS2213

MS2213

  • Description:RF TRANS NPN 55V 1.215GHZ M214
  • Series:-

SKU:da5a92ff7434 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 55V 1.215GHZ M214
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):55V
  • Frequency - Transition:960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:7.8dB
  • Power - Max:75W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 1A, 5V
  • Current - Collector (Ic) (Max):3.5A
  • Operating Temperature:250°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:M214
  • Supplier Device Package:M214
  • Grade:-
  • Qualification:-

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MS2213

Overview

The MS2213 is a bipolar RF transistor manufactured by Microsemi Corporation, designed for high-power radio frequency applications. It operates within the frequency range of 960 MHz to 1.215 GHz and delivers an output power of 75W. The device features a maximum collector-emitter voltage of 55V and supports a continuous collector current of 3.5A. Packaged in the M214 chassis mount configuration, this NPN transistor is engineered for robust performance in demanding RF environments requiring stable signal amplification.

Feature Summary

  • High-power RF capability with 75W output
  • Broadband operation across 960 MHz to 1.215 GHz
  • Robust chassis mount construction for thermal management

Applications

  • RF power amplification
  • Military communication systems
  • Broadcast transmitter stages

Procurement Notes

Verify the manufacturer origin carefully, as Microsemi's semiconductor assets were acquired by Microchip Technology. Ensure the specific package variant matches the required chassis mounting specifications. Confirm RoHS compliance status if environmental regulations apply to the target deployment. Cross-reference the part number against official Microchip or legacy Microsemi documentation to avoid counterfeit components.

Selection Notes

Select this component when high linear power output is required in the UHF band. The M214 package necessitates specific heatsinking infrastructure due to the 75W dissipation rating. Evaluate thermal resistance requirements against the system's cooling capabilities. This transistor is suitable for applications where ruggedness and high current handling are prioritized over miniaturization.

Part Context

The MS2213 belongs to the category of bipolar RF transistors intended for specialized high-power use. Originally produced by Microsemi Corporation, it serves niche markets requiring reliable RF performance. The component represents a transition point in corporate history following the acquisition by Microchip Technology, maintaining its technical specifications while updating supply chain sources.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

MS2213MS2213

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