MS2422

Overview

The MS2422 is an NPN bipolar RF transistor manufactured by Microsemi Corporation, designed for high-power radio frequency applications. It operates within a transition frequency range of 960MHz to 1.215GHz and supports a maximum collector current of 22A. The device features a maximum collector-emitter breakdown voltage of 65V and delivers up to 875W of power output. With a DC current gain (hFE) of at least 10 at 1A and 5V, it utilizes an M138 base-mount package suitable for robust thermal management. The component is rated for junction temperatures up to 200°C and offers a typical gain of 6.3dB.

Feature Summary

• High-power RF capability with 875W output rating
• Wideband operation across the 960MHz to 1.215GHz spectrum
• Robust thermal performance with 200°C maximum junction temperature
• Base-mount construction for efficient heat dissipation

Applications

• High-power radio frequency amplification
• Broadcast transmitter stages
• Industrial RF heating systems

Procurement Notes

Verify component authenticity through authorized channels as the MS2422 is listed as obsolete. Confirm package integrity and pin configuration against the M138 specification before integration. Check for available surplus stock from certified distributors if new production units are unavailable. Ensure storage conditions meet semiconductor handling standards to prevent degradation.

Selection Notes

Select this component for applications requiring high power density in the UHF band. Evaluate thermal management solutions compatible with the M138 base-mount style. Compare hFE requirements against circuit design specifications at the target operating current. Consider the 65V breakdown voltage limit when designing biasing networks for peak signal swings.

Part Context

The MS2422 belongs to the category of discrete bipolar RF transistors produced by Microsemi Corporation. It is part of a lineage of high-power semiconductor devices intended for demanding RF environments. The M138 package is a standard form factor for mounting such components onto heatsinks or chassis structures for effective thermal control in industrial and broadcast equipment.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As the MS2422 is marked as obsolete, engineers must consult manufacturer obsolescence notices or technical support for qualified replacement recommendations. Cross-referencing electrical parameters with alternative high-power NPN RF transistors is necessary for redesign.