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The MSAD120-08 is a glass passivated rectifier diode module manufactured by Microsemi Corporation. It features a common anode configuration with two elements housed in the D1 case. The device supports a maximum repetitive reverse voltage (VRRM) of 800 V and a non-repetitive peak surge voltage (VRSM) of 900 V. It provides an average forward current (IFAV) rating of 120 A at a case temperature of 100°C. The module utilizes an aluminum oxide ceramic isolated metal baseplate for heat transfer.
Verify the specific suffix against official documentation to confirm voltage ratings, as the MSAD120 series includes variants with different blocking voltages. Confirm package type and thermal characteristics match design requirements. Check manufacturer notices for product lifecycle status and availability constraints before finalizing procurement plans.
Select based on required reverse voltage and thermal management needs. Ensure the operating junction temperature remains within the specified -40°C to 150°C range. Consider derating curves for ambient temperatures exceeding standard conditions. Verify isolation voltage requirements are met by the module's 3000 Vrms capability.
This component belongs to the MSKD120, MSAD120, and MSCD120 family of glass passivated rectifier diode modules. These devices share identical physical dimensions and thermal characteristics but differ in voltage ratings. The MSAD120 series specifically denotes the 800V to 1800V voltage options within this standardized module lineup.
Cross-reference with other manufacturers offering D1 packaged common anode diode modules. Ensure equivalent IFAV, VRRM, and thermal resistance values. Verify pinout compatibility and mounting hole specifications for direct replacement.
The module has an isolation voltage rating of 3000 Vrms at 50Hz for 1 minute.
The maximum non-repetitive peak forward surge current is 2800 A for a duration of 10ms at a junction temperature of 45°C.
Heat is transferred through an aluminum oxide ceramic isolated metal baseplate, with a thermal resistance from junction to case of 0.26°C/W per diode.