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Product Detailed Parameters
- Description：N-Channel MOSFET,100V,TO-263
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-50°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Overview
The Bruckewell MSB100N045SA is an N-Channel MOSFET utilizing trench DMOS technology, designed for high-efficiency fast switching applications. It features a 100V drain-source voltage rating and a maximum continuous drain current of 120A at 25°C case temperature. The device offers a typical static drain-source on-resistance (RDS(on)) of 3.7mΩ at VGS=10V and ID=30A. Key electrical parameters include a gate threshold voltage ranging from 2V to 4V, a single pulse avalanche energy of 702mJ, and a total gate charge of 72nC. It operates within a junction temperature range of -50°C to +150°C.
Feature Summary
- Advanced trench DMOS technology minimizes on-resistance while providing superior switching performance.
- Enhanced capability to withstand high energy pulses in both avalanche and commutation modes.
- Guaranteed 100% EAS testing ensures reliability under unclamped inductive switching conditions.
Applications
- Motor Driver
- Load Switch
- Synchronous Rectifier
- BMS Applications
Procurement Notes
Verify the specific revision level against the manufacturer's latest documentation before finalizing procurement. Confirm that the TO-263 package dimensions align with the target PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance ratings during operation.
Selection Notes
Select this component for circuits requiring low conduction losses and robust avalanche ruggedness. Evaluate the thermal impedance characteristics against the expected duty cycle and ambient temperature conditions. Verify that the gate drive voltage meets the minimum threshold required to achieve the specified low on-resistance values.
Part Context
This component belongs to the Bruckewell N-Channel MOSFET series, specifically engineered using trench DMOS architecture. The design focuses on reducing RDS(on) and improving dv/dt capabilities compared to standard planar technologies. It serves as a power switching element suitable for modern high-frequency power conversion topologies.
Replacement Considerations
Consult official Bruckewell documentation for verified substitute part numbers. Do not assume functional equivalence based solely on matching voltage or current ratings without reviewing detailed electrical parameter tables.
FAQ
What is the guaranteed avalanche energy rating?
The device guarantees 100% EAS testing with a maximum single pulse avalanche energy of 702 mJ under specific test conditions.
How does the on-resistance vary with temperature?
The normalized on-resistance increases as the junction temperature rises, following the typical output characteristics provided in the datasheet graphs.
