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Product Detailed Parameters
- Description：P-Channel MOSFET,-100V,TO-263
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Overview
The MSB100P50 is a P-Channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching. It features a -100V drain-source voltage rating and a maximum continuous drain current of -35A at 25°C case temperature. The device guarantees an on-resistance of 50mΩ at VGS=-10V and ID=-20A. It supports a single pulse avalanche energy of 35.2mJ and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Advanced trench DMOS technology minimizes on-resistance and enhances switching performance.
- Guaranteed 100% single pulse avalanche energy testing ensures reliability under high energy pulses.
- RoHS compliant and designated as a green product.
Applications
- Networking equipment
- Load switch circuits
- LED applications
- Quick chargers
Procurement Notes
Verify the specific datasheet revision (Rev. A -2023) against your design requirements. Confirm that the TO-263 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values during operation.
Selection Notes
Select this component for applications requiring robust avalanche capability and low conduction losses. Evaluate the thermal dissipation limits based on the operating environment, as power dissipation drops significantly from case-mounted to ambient conditions. Verify gate drive voltages match the threshold characteristics for optimal switching.
Part Context
Manufactured by Bruckewell Technology Corporation, the MSB100P50 belongs to a series of P-Channel MOSFETs optimized for power management. The device integrates superior commutation mode withstand capabilities, making it suitable for demanding industrial and consumer electronics environments where space and efficiency are critical constraints.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the guaranteed single pulse avalanche energy?
The MSB100P50 guarantees 100% EAS testing with a maximum rating of 35.2 mJ at VDD=-50V, L=0.1mH, and IAS=-28A.
How does the on-resistance vary with temperature?
The normalized on-resistance increases with junction temperature, as illustrated in the typical electrical characteristics graph showing the relationship between RDS(ON) and TJ.
