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MSC025SMA330B4N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET SIC 3300V 25 MOHM TO-247-. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for MSC025SMA330B4N
- Description：MOSFET SIC 3300V 25 MOHM TO-247-
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：3300 V
- Current - Continuous Drain (Id) @ 25°C：104A
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
Single FETs, MOSFETs datasheet and documents for MSC025SMA330B4N
Single FETs, MOSFETs Overview
The MSC025SMA330B4N is a silicon carbide (SiC) MOSFET manufactured by Microchip Technology. It features an N-channel configuration housed in a TO-247-4 Notch package. The device supports a drain-source breakdown voltage of 3.3 kV and delivers a continuous drain current of 104 A. Its on-resistance is specified at 25 mOhms. Operating temperatures range from -55 C to +150 C.
Single FETs, MOSFETs Feature Summary
- Utilizes silicon carbide semiconductor technology for high-voltage power applications
- Provides enhanced dynamic performance and thermal characteristics compared to traditional silicon devices
- Features zero reverse recovery charge inherent to the SiC material structure
Single FETs, MOSFETs Applications
- High-voltage power designs requiring robust switching capabilities
- Industrial motor drive systems operating under extreme conditions
- Uninterruptible power supply units demanding high efficiency
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm datasheet revisions match specific manufacturing batches. Ensure handling procedures adhere to electrostatic discharge protocols suitable for sensitive semiconductor components during storage and assembly processes.
Single FETs, MOSFETs Selection Notes
Select this component for circuits necessitating high blocking voltages up to 3.3 kV. Evaluate thermal management requirements given the 150 C maximum junction temperature limit. Consider the TO-247-4 package constraints for PCB layout and heat sinking integration within the target power electronics architecture.
Single FETs, MOSFETs Part Context
This discrete SiC MOSFET belongs to Microchip's broader portfolio of wide-bandgap power semiconductors. It complements other series like the MSC080SMA330B4N, offering lower on-resistance for higher current applications within the same voltage class. The product line targets modernization of legacy silicon-based power conversion systems.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes are not explicitly confirmed in public documentation. Equivalent replacements must match the 3.3 kV rating, 25 mOhm resistance, and TO-247-4 footprint while verifying gate threshold and charge parameters against original design specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
